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| SMD Type HEXFET Power MOSFET KRF9952 IC IC Features Generation V Technology Ultra Low On-Resistance Dual N and P Channel MOSFET Surface Mount Very Low Gate Charge and Switching Losses Fully Avalanche Rated 1 : Source1 2 : Gate1 3 : Source2 4 : Gate2 5 : Drain2 6 : Drain2 7 : Drain1 8 : Drain1 Absolute Maximum Ratings Ta = 25 Parameter Drain-Source Voltage Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V @ Ta = 25 Continuous Drain Current, VGS @ 10V @ Ta = 70 Pulsed Drain Current *1 Continuous Source Current (Diode Conduction) Power Dissipation Power Dissipation @Ta= 25 @Ta= 70 EAS IAR EAR dv/dt TJ, TSTG R JA Symbol VDS VGS ID ID IDM IS PD N-Channel 30 20 3.5 2.8 16 1.7 2 1.3 44 2.0 0.25 5.0 P-Channel Unit V V -2.3 -1.8 -10 -1.3 A W 57 -1.3 mJ A mJ -5 -55 to + 150 62.5 /W V/ns A Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt *2 Junction and Storage Temperature Range Maximum Junction-to-Ambient *3 *1 Repetitive rating; pulse width limited by max. junction temperature. *2 N-Channel ISD P-Channel ISD 2.0A, di/dt -1.3A, di/dt 100A/ 84A/ s, VDD s, VDD 10sec. V(BR)DSS, TJ V(BR)DSS, TJ 150 150 *3 Surface mounted on FR-4 board, t www.kexin.com.cn 1 SMD Type KRF9952 Electrical Characteristics Ta = 25 Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance Symbol V(BR)DSS V(BR)DSS/ IC IC Testconditons VGS = 0V, ID = 250 A VGS = 0V, ID = -250 A ID = 1mA,Reference to 25 ID = -1mA,Reference to 25 VGS =10V, ID = 2.2A*1 VGS = 4.5V, ID = 1.0A*1 VGS = -10V, ID = -1.0A*1 VGS = -4.5V, ID = -0.5A*1 VDS = VGS, ID = 250 A VDS = VGS, ID = -250 A VDS = 15V, ID = 3.5A*1 VDS = -15V, ID = -2.3A*1 VDS = 24V, VGS = 0V VDS = -24V, VGS = 0V VDS = 24V, VGS = 0V, TJ = 125 VDS = -24V, VGS = 0V, TJ = 125 N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Channel ID = -2.3A,VDS = -10V,VGS = -10V N-Channel VDD = 10V,ID = 1.0A,RG = 6.0 RD=10 P-Channel VDD = -10V,ID = -1.0A,RG = 6.0 RD=10 P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Channel VGS = 0V,VDS = 15V,f = 1.0MHz P-Channel VGS = 0V,VDS = -15V,f = 1.0MHz N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch Min 30 -30 Typ Max Unit V 0.015 0.015 0.08 0.12 0.10 0.15 TJ RDS(on) RDS(on) VGS(th) gfs V/ 0.165 0.250 0.290 0.400 1.0 -1.0 12 2.4 2.0 -2.0 25 -25 100 6.9 6.1 1.0 1.7 1.8 1.1 6.2 9.7 8.8 14 13 20 3.0 6.9 190 190 120 110 61 54 1.7 -1.3 16 16 A pF 12 2.0 3.4 3.5 2.2 12 19 18 28 26 40 6.0 14 ns nC nA A V S Drain-to-Source Leakage Current IDSS Gate-to-Source Forward Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Continuous Source Current Pulsed Source Current Body Diode) IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss IS ISM VGS = 20V N-Channel ID = 1.8A,VDS = 10V,VGS =10V Body Diode) *2 2 www.kexin.com.cn SMD Type KRF9952 Electrical Characteristics Ta = 25 Parameter Diode Forward Voltage Reverse Recovery Time Reverse RecoveryCharge *1 Pulse width 300 s; duty cycle 2%. Symbol VSD trr Qrr Testconditons TJ = 25 , IS = 1.25A, VGS = 0V*3 TJ = 25 , IS = -1.25A, VGS = 0V*3 N-Channel TJ = 25 , IF =1.25A,di/dt = 100A/ P-Channel TJ=25 , IF=-1.25A,di/dt=-100A/ s*1 N-Ch P-Ch N-Ch s*1 P-Ch N-Ch P-Ch Min Typ 0.82 -0.82 27 27 28 31 Max 1.2 -1.2 53 54 57 62 IC IC Unit V ns nC *2 Repetitive rating; pulse width limited by max. junction temperature. *3 N-Channel Starting TJ = 25 , L = 22mH RG = 25 , IAS = 2.0A. P-Channel Starting TJ = 25 , L = 67mH RG = 25 , IAS = -1.3A. www.kexin.com.cn 3 |
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